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IXFH
IXFT
58N20Q
58N20Q
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
TO-247 AD Outline
g fs
V DS = 10 V; I D = 0.5 I D25 , pulse test
24
34
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
3600
870
pF
pF
1
2
3
C rss
t d(on)
280
20
pF
ns
t r
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
40
ns
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCK
R G = 1.5 ? (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
(TO-247)
40
13
98 140
25 35
45 70
0.42
0.25
ns
ns
nC
nC
nC
K/W
K/W
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A 1 2.2 2.54 .087 .102
A 2 2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b 1 1.65 2.13 .065 .084
b 2 2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
Source-Drain Diode
Symbol Test Conditions
I S V GS = 0 V
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
58 A
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
I SM
V SD
Repetitive;
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
232
1.5
A
V
TO-268 Outline
t rr
Q RM
I RM
I F = I S -di/dt = 100 A/ μ s, V R = 100 V
0.7
7
200
ns
μ C
A
Min. Recommended Footprint
Dimensions in mm and inches
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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